[Exact] Comparison between CB, CC, CE Configuration of BJT
Bipolar Junction Transistor(BJT) has a total of three terminals that are Emitter, Base, and Collector. So when a BJT is to be connected in a circuit, it's one terminal that must be taken as the common terminal for both input and output. So, according to taking common terminal, there are three types of configurations that are Common Emitter or CE configuration, Common Base or CB configuration, and Common Collector or CC configuration.
These three transistor configurations have their own characteristics, advantages, and applications. So, let's go to know the comparison between CB, CC, and CE configuration and their characteristics, applications.
Comparison between CB, CE, and CC Configuration
Characteristics
|
CB
|
CE
|
CC
|
Common Terminal for Input and Output
|
Base Terminal
|
Emitter
Terminal
|
Collector
Terminal
|
Input voltage applied between
|
Emitter and
Base terminal
|
Base and
Emitter Terminal
|
Base and
Collector Terminal
|
Output Voltage taken across
|
Collector
and Base Terminal
|
Collector
and Emitter Terminal
|
Emitter
and Collector Terminal
|
Input Impedance
|
Very
Low(only 50 to 500 ohm)
|
Medium(500
to 5000 ohm)
|
Very
high(200 to 750 kilo ohm)
|
Output Impedance
|
Very
High(1 to 10 Mega Ohm)
|
Medium(50
to 500 kilo ohm)
|
Very
Low( up to 50 ohm)
|
Input Current
|
Emitter
Current or IE
|
Base
Current or IB
|
Base
Current or IB
|
Output Current
|
Collector
Current or IC
|
Collector
Current or IC
|
Emitter
Current or IE
|
Output Signal Phase
|
Same
phase with input
|
180
degree out of phase
|
Same
phase with input
|
Current Gain
|
Always
less than Unity
α = IC/IE
|
Between
35 to 500
β = IC/IB
|
Very
High
γ = IE/IB
|
Voltage Gain
|
About
150
|
About
500
|
Less
Than Unity
|
Leakage Current
|
Very
Small
|
Very
Large
|
Very
Large
|
Power Gain
|
Medium
|
High
|
Medium
|
Application
|
High
Frequency Circuits
|
RF
Signal Processing
|
Switching
Circuits
|
CB configuration of Transistor
In this configuration, the base terminal of the transistor is taken as the common terminal. In this configuration, the input voltage is applied between emitter and base terminal and the output voltage is taken across the collector and base terminal. Here you can see the diagram below.
Characteristics of CB Configuration
1. This configuration provides very low input impedance(only 50 to 500 ohm).
2. It provides very high output impedance(1 to 10 Mega Ohm).
3. In this configuration, the current gain denoted by alpha which is always less than unity(0.95 to 0.99).
4. In this configuration the output signal always in the same phase with the input signal.
Application of CB configuration
1. Transistor CB configuration used in current to voltage converter circuits.
2. This configuration used in very high-frequency applications.
3. This configuration is used to increase the impedance of the current source.
CE configuration of Transistor
In this configuration, the emitter terminal of the transistor is taken as the common terminal. The input voltage is applied between Base and Emitter terminal and the output voltage is taken across the collector and emitter terminal. Here you can see the diagram below.
Characteristics of CE configuration
1. This configuration provides medium input impedance(500 ohm to 5000 ohm).
2. It provides very high output impedance(50 to 500 kilo Ohm)
3. In this configuration, the current gain is denoted by beta which varies between 35 to 500
4. In this configuration, the phase difference between output and input signal is 180 degrees out of phase.
Application of CE configuration
1. CE configuration is used RF signal processing circuits.
2. This configuration is used for audio amplifier circuits.
3. This configuration is used in sensor controller circuits.
Read Also: Main Difference Between MOSFET and BJT
CC configuration of Transistor
This is the most usable and simple configuration of transistors. In this configuration, the collector terminal of the transistor is used as a common terminal. The input voltage is applied between the Base and Collector terminal and the output voltage is taken across emitter and collector terminal. Here you can see the diagram below.
Characteristics of CC Configuration
1. This configuration provides very high input impedance(200 to 750 kilo Ohm).
2. It provides very low output impedance(up to 50 Ohm).
3. In this configuration, the current gain is denoted by gamma which is very high.
4. In this configuration, the output signal always in the same phase with the input signal.
Application of CC Configuration
1. Transistor CC configuration is used for switching purposes.
2. This configuration is used for impedance matching.
3. This configuration is used in power amplifier circuits.
4. This configuration is used to make digital logic gates.
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[Exact] Comparison between CB, CC, CE Configuration of BJT
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